Abstract
The schematic design of electronic devices for harsh environments requires SPICE models of electronic components that take into account the influence of ultralow and ultrahigh ambient temperatures. However, the standard SPICE models of components in commercial versions of SPICE-like simulators provide sufficient accuracy in a limited temperature range (–60 to 150°С) and cannot be used for calculating electronic circuits in the range from ultralow to ultrahigh temperatures. This paper presents modified Low-T and High-T SPICE models of field-effect transistors with the MOSFET and JFET structure, intended for calculating electronic circuits in the temperature range from ultralow to ultrahigh (–200 to 300°С) temperatures. All the models are built using a universal approach, which consists of adding additional expressions for the temperature-dependent parameters of the model to the basic SPICE model of the devices. A procedure for extracting the parameters of SPICE models based on the results of measurements or TCAD modeling of the standard set of I–V and CV characteristics in a wide temperature range is developed. The error in describing the static I–V characteristics of MOSFET and JFET transistors does not exceed 10–12% in the temperature range –200 to 300°С.
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Funding
This work was supported by the Program of Fundamental Research of the Higher School of Economics, Moscow, grant no. TZ-99 and the Russian Foundation for Basic Research, grant no. 18-07-00898-A.
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Ismail-Zade, M.R. JFET and MOSFET SPICE Models in a Wide Temperature Range. Russ Microelectron 50, 486–490 (2021). https://doi.org/10.1134/S1063739721070064
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DOI: https://doi.org/10.1134/S1063739721070064