Static Random-Access Memories (SRAMs) are an integral part of the chip industry, occupying a noticeable share of the memory market due to their high performance and compatibility with CMOS technology. Traditional SRAMs do not have the capacity to retain data after power-off, preventing their use in non-volatile applications. This paper presents a novel Non-Volatile SRAM (NVSRAM) device based on Resistive RAM (RRAM) technology. A comparison between SRAM and the proposed NVSRAM performances is proposed at both cell and memory array level. The comparison covers several metrics such as energy consumption, area and static noise margin (SNM). Moreover, this work proposes a deep analysis of the impact of RRAM variability as well as the CMOS subsystem variability on the NVSRAM performances. The proposed structure demonstrates robust NVSRAM performances in terms of stability and reliability despite RRAM variability.

静态随机存取存储器 (SRAM) 是芯片行业不可或缺的一部分，由于其高性能和与 CMOS 技术的兼容性，在存储器市场中占据了显着的份额。传统 SRAM 不具备断电后保留数据的能力，因此无法在非易失性应用中使用。本文介绍了一种基于电阻式 RAM (RRAM) 技术的新型非易失性 SRAM (NVSRAM) 设备。在单元和存储器阵列级别提出了 SRAM 和建议的 NVSRAM 性能之间的比较。比较涵盖多个指标，例如能耗、面积和静态噪声容限 (SNM)。此外，这项工作提出了对 RRAM 可变性以及 CMOS 子系统可变性对 NVSRAM 性能的影响的深入分析。