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Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability

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Abstract

Static Random-Access Memories (SRAMs) are an integral part of the chip industry, occupying a noticeable share of the memory market due to their high performance and compatibility with CMOS technology. Traditional SRAMs do not have the capacity to retain data after power-off, preventing their use in non-volatile applications. This paper presents a novel Non-Volatile SRAM (NVSRAM) device based on Resistive RAM (RRAM) technology. A comparison between SRAM and the proposed NVSRAM performances is proposed at both cell and memory array level. The comparison covers several metrics such as energy consumption, area and static noise margin (SNM). Moreover, this work proposes a deep analysis of the impact of RRAM variability as well as the CMOS subsystem variability on the NVSRAM performances. The proposed structure demonstrates robust NVSRAM performances in terms of stability and reliability despite RRAM variability.

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Data Availability Statement

Data sharing not applicable to this article as no datasets were generated or analysed during the current study.  

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Acknowledgements

Authors would like to acknowledge the support of the Lebanese International University and Aix-Marseille University.

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Authors and Affiliations

  1. IM2NP-UMR CNRS 7334, Aix-Marseille University, Marseille, France

    Hussein Bazzi, Hassen Aziza & Mathieu Moreau

  2. Department of Electrical and Electronics Engineering, Lebanese International University, Beirut, Lebanon

    Hussein Bazzi

  3. Department of Electrical and Electronics Engineering, The International University of Beirut, Beirut, Lebanon

    Adnan Harb

Authors
  1. Hussein Bazzi
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  2. Hassen Aziza
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  3. Mathieu Moreau
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  4. Adnan Harb
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Corresponding author

Correspondence to Hussein Bazzi.

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Communicated by M. Taouil.

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Bazzi, H., Aziza, H., Moreau, M. et al. Performances and Stability Analysis of a Novel 8T1R Non-Volatile SRAM (NVSRAM) versus Variability. J Electron Test 37, 515–532 (2021). https://doi.org/10.1007/s10836-021-05965-x

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  • DOI: https://doi.org/10.1007/s10836-021-05965-x

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