$\mathrm{Zr}{\mathrm{Te}}_5$ is a layered material that exhibits intricate topological effects. Intensive theoretical and experimental efforts have been devoted to try to understand the physics in this material. In this paper the temperature dependent magnetotransport properties of $\mathrm{Zr}{\mathrm{Te}}_5$ thin flakes are investigated. A characteristic temperature $T^{*}$ is observed in the temperature dependence of three different types of magnetoresistance simultaneously, which are the saturated Hall anomaly, the chiral anomaly, and the longitudinal magnetoresistance. Furthermore, the value of $T^{*}$ decreases monotonically from 200 to 160 K with increasing thickness of the $\mathrm{Zr}{\mathrm{Te}}_5$ thin flakes from 42 to 89 nm. Temperature induced topological phase transitions are attributed to the cause of such anomaly in the three types of magnetoresistance at $T^{*}$. Our findings provide a multiparameter indicator for the emergence of topological phase transition in $\mathrm{Zr}{\mathrm{Te}}_5$ and could be extended to the study of other topological materials. The temperature dependence of the three types of magnetoresistance also sheds light on the role of anomalous Hall effect in the transport properties of $\mathrm{Zr}{\mathrm{Te}}_5$.

中文翻译：

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拓扑材料 ZrTe5 薄片磁阻中的交叉行为

$锆{特}_5$是一种具有复杂拓扑效应的层状材料。大量的理论和实验工作致力于尝试理解这种材料的物理原理。在本文中，温度相关的磁传输特性$锆{特}_5$研究薄片。特征温度${吨}^{*}$同时观察到三种不同类型磁阻的温度依赖性，即饱和霍尔异常、手征异常和纵向磁阻。此外，价值${吨}^{*}$ 随着厚度的增加，从 200 到 160 K 单调下降 $锆{特}_5$42 至 89 nm 的薄片。温度引起的拓扑相变归因于三种类型的磁阻在${吨}^{*}$. 我们的发现为拓扑相变的出现提供了一个多参数指标$锆{特}_5$并且可以扩展到其他拓扑材料的研究。这三种磁阻的温度依赖性也揭示了异常霍尔效应在传输特性中的作用$锆{特}_5$.