Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5

Zhijian Xie, Xinjian Wei, Xiaobin Qiang, Yu Zhang, Shili Yan, Shimin Cao, Congkuan Tian, Peipei Wang, Liyuan Zhang, G. D. Gu, Haizhou Lu, and Jian-Hao Chen
Phys. Rev. B 104, 125439 – Published 27 September 2021
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Abstract

ZrTe5 is a layered material that exhibits intricate topological effects. Intensive theoretical and experimental efforts have been devoted to try to understand the physics in this material. In this paper the temperature dependent magnetotransport properties of ZrTe5 thin flakes are investigated. A characteristic temperature T* is observed in the temperature dependence of three different types of magnetoresistance simultaneously, which are the saturated Hall anomaly, the chiral anomaly, and the longitudinal magnetoresistance. Furthermore, the value of T* decreases monotonically from 200 to 160 K with increasing thickness of the ZrTe5 thin flakes from 42 to 89 nm. Temperature induced topological phase transitions are attributed to the cause of such anomaly in the three types of magnetoresistance at T*. Our findings provide a multiparameter indicator for the emergence of topological phase transition in ZrTe5 and could be extended to the study of other topological materials. The temperature dependence of the three types of magnetoresistance also sheds light on the role of anomalous Hall effect in the transport properties of ZrTe5.

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  • Received 20 May 2021
  • Revised 16 August 2021
  • Accepted 1 September 2021

DOI:https://doi.org/10.1103/PhysRevB.104.125439

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Zhijian Xie1,2, Xinjian Wei1,3, Xiaobin Qiang4, Yu Zhang3, Shili Yan3, Shimin Cao1,3, Congkuan Tian1,3, Peipei Wang4, Liyuan Zhang4, G. D. Gu5, Haizhou Lu4, and Jian-Hao Chen1,2,3,6,*

  • 1International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
  • 2Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China
  • 3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • 4Department of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
  • 5Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973, USA
  • 6Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China

  • *Corresponding author: chenjianhao@pku.edu.cn

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Issue

Vol. 104, Iss. 12 — 15 September 2021

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