In the present work, partial morphology-damaged laser boron doping technique and novel passivated emitter and rear locally diffused (PERL) silicon solar cells were studied. Effective boron doping as well as the partial morphology damage was achieved at the same time by laser doping (LD). Meanwhile, the electrical property of laser-doped area deteriorated dramatically, with the sharp decrease of effective minority carrier lifetime (τ_eff) and implied open voltage (iV_OC). The degradation was mainly ascribed to the destroyed SiN_xO_y structure, which was characterized by secondary ion mass spectroscopy (SIMS). However, the total amount of boron atoms was not large enough to modify the p + concentration after Al alloying. By applying multiple laser scanning, surface p + concentration of 5e20 cm^− 3 was realized, contributing to an enhanced local back surface field (BSF). Eventually, the efficiency of laser boron-doped PERL solar cell reached 22.00%, which was 0.1% higher than that of the conventional PERC solar cells. The present work will be helpful to deepen the understanding of boron laser doping as well as PERL structure solar cell.

在目前的工作中，研究了部分形态损坏的激光硼掺杂技术和新型钝化发射极和背面局部扩散 (PERL) 硅太阳能电池。通过激光掺杂（LD）同时实现了有效的硼掺杂以及部分形态损伤。同时，激光掺杂区的电性能急剧恶化，有效少数载流子寿命（τ _eff）和隐含开路电压（iV _OC）急剧下降。降解主要归因于破坏的 SiN _x O _y结构，其特征在于二次离子质谱（SIMS）。然而，硼原子的总量不足以改变铝合金化后的 p + 浓度。通过应用多次激光扫描，实现了 5e20 cm ^{- 3 的}表面 p + 浓度，有助于增强局部背表面场 (BSF)。最终，激光掺硼PERL太阳能电池的效率达到22.00%，比传统PERC太阳能电池高0.1%。目前的工作将有助于加深对硼激光掺杂以及PERL结构太阳能电池的理解。