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Partial morphology-damaged laser boron doping technique and novel passivated emitter and rear locally diffused silicon solar cells

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Abstract

In the present work, partial morphology-damaged laser boron doping technique and novel passivated emitter and rear locally diffused (PERL) silicon solar cells were studied. Effective boron doping as well as the partial morphology damage was achieved at the same time by laser doping (LD). Meanwhile, the electrical property of laser-doped area deteriorated dramatically, with the sharp decrease of effective minority carrier lifetime (τeff) and implied open voltage (iVOC). The degradation was mainly ascribed to the destroyed SiNxOy structure, which was characterized by secondary ion mass spectroscopy (SIMS). However, the total amount of boron atoms was not large enough to modify the p + concentration after Al alloying. By applying multiple laser scanning, surface p + concentration of 5e20 cm− 3 was realized, contributing to an enhanced local back surface field (BSF). Eventually, the efficiency of laser boron-doped PERL solar cell reached 22.00%, which was 0.1% higher than that of the conventional PERC solar cells. The present work will be helpful to deepen the understanding of boron laser doping as well as PERL structure solar cell.

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Acknowledgements

This work was supported by the National Key R&D Program of China (2018YFB1500300).

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Authors and Affiliations

  1. School of Materials Science and Engineering, East China University of Science and Technology, 200237, Shanghai, China

    Cui Liu & Xiao Yuan

  2. Shanghai Institute of Space Power-sources, China Aerospace Science and Technology Corporation, 200245, Shanghai, China

    Ning Yang

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  1. Cui Liu
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  2. Ning Yang
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  3. Xiao Yuan
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Correspondence to Cui Liu or Ning Yang.

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Liu, C., Yang, N. & Yuan, X. Partial morphology-damaged laser boron doping technique and novel passivated emitter and rear locally diffused silicon solar cells. J Mater Sci: Mater Electron 32, 25332–25338 (2021). https://doi.org/10.1007/s10854-021-06992-2

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