Tunable spin-orbit coupling in two-dimensional InSe,Physical Review B

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Tunable spin-orbit coupling in two-dimensional InSe
Physical Review B ( IF 3.2 ) Pub Date : 2021-09-22 , DOI: 10.1103/physrevb.104.125432
A. Ceferino _{1,

2} , S. J. Magorrian ₂ , V. Zólyomi ₃ , D. A. Bandurin _{1,

4} , A. K. Geim _{1,

2} , A. Patanè ₅ , Z. D. Kovalyuk ₆ , Z. R. Kudrynskyi ₅ , I. V. Grigorieva _{1,

2} , V. I. Fal'ko _{1,

2,

7}

Affiliation

We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer

γ

-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid

k \cdot p

tight-binding model, fully parametrized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.

中文翻译：

二维 InSe 中的可调谐自旋轨道耦合

我们证明了几层中导带边缘附近电子的自旋轨道耦合 (SOC) 强度

γ

-InSe 薄膜可以在很宽的范围内进行调谐。这种可调性是薄膜厚度相关的本征和电场诱导的 SOC 之间竞争的结果，可能允许电开关自旋电子器件。使用混合动力

克 \cdot 磷

紧束缚模型，在密度泛函理论计算的帮助下完全参数化，我们量化了基于 InSe 的场效应晶体管的各种几何形状的 SOC 强度。将理论计算的 SOC 强度与双门控多层 InSe 薄膜的弱反定位测量结果进行比较，根据 SOC 引起的 Dyakonov-Perel 自旋弛豫解释，显示理论和实验之间的良好一致性。

更新日期：2021-09-22

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