Abstract
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer -InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid tight-binding model, fully parametrized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.
15 More- Received 27 January 2021
- Accepted 30 June 2021
DOI:https://doi.org/10.1103/PhysRevB.104.125432
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