AlN samples have been grown on sapphire substrate using nucleation layers (NLs) having different growth temperatures. The growth temperature of the NL has been varied over a wide range of temperatures highlight the effects on the quality of the AlN epilayer. The AlN samples have been characterized by high-resolution X-ray diffraction (HRXRD), atomic force microscope (AFM), Raman scattering spectrometer, and spectrophotometer. The obtained results demonstrate the temperature of NL has a direct effect on the quality of the AlN sample and occurs major differences in the quality of structure, surface morphology, and amount of strain in the AlN epilayers. Based on HRXRD measurement results, when the growth temperature of AlN NL is raised to 1075 °C, the crystal quality has improved owing to both the density of AlN nucleation islands reduction and the grain size outgrow. However, continuing to increase the growth temperature of the AlN NL layer begins to degrade the quality. In addition, the findings obtained from the Raman measurement demonstrates that the tensile stress can be control through NL growth temperature. Therefore, as can be seen from the characterization results, the growth temperature of AlN NL is important to obtain an AlN sample with high quality.

AlN 样品已使用具有不同生长温度的成核层 (NL) 在蓝宝石衬底上生长。NL 的生长温度在很宽的温度范围内变化，突出了对 AlN 外延层质量的影响。AlN 样品已通过高分辨率 X 射线衍射 (HRXRD)、原子力显微镜 (AFM)、拉曼散射光谱仪和分光光度计进行表征。获得的结果表明 NL 的温度对 AlN 样品的质量有直接影响，并且在 AlN 外延层的结构质量、表面形态和应变量方面发生重大差异。根据 HRXRD 测量结果，当 AlN NL 的生长温度升高到 1075 °C 时，由于 AlN 成核岛的密度减少和晶粒尺寸长大，晶体质量得到改善。然而，继续提高 AlN NL 层的生长温度开始降低质量。此外，从拉曼测量中获得的结果表明，可以通过 NL 生长温度控制拉伸应力。因此，从表征结果可以看出，AlN NL 的生长温度对于获得高质量的 AlN 样品很重要。