The influence of double deck T-gate on L_G = 0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate offer f_MAX of 107 Giga Hertz, f_T of 60 Giga Hertz and the breakdown voltage of 136 Volts. Furthermore, it produces the maximum-transconductance and drain-current of 0.187 Siemens/mm and 0.41 Ampere/mm respectively. In addition, the lateral electric-field noticed at gate-edge shows 2.1 × 10⁶ Volts/cm. Besides, the double deck T-gate AlN/GaN HEMT achieves a 45% increment in breakdown voltage compared to traditional GaN-HEMT device. Moreover, it reveals a remarkable Johnson figure-of-merit of 7.9 Tera Hertz Volt. Therefore, the double deck T-gate on AlN/GaN/AlGaN HEMT is the superlative device for 60 GHz V-band satellite application.

本文分析了双层T-gate对L _G  = 0.2 μm AlN/GaN/AlGaN HEMT的影响。由氮化硅支持的 T 型栅极提供了极大的机械可靠性。它会降低栅极边缘的波峰电场并延迟器件的击穿电压。碳化硅衬底上的 0.2 微米双层 T 栅极 HEMT 提供107 吉赫的f _MAX、60 吉赫的f _T和 136 伏的击穿电压。此外，它产生的最大跨导和漏极电流分别为 0.187 Siemens/mm 和 0.41 Ampere/mm。此外，在栅极边缘注意到的横向电场显示为 2.1 × 10 ⁶伏特/厘米。此外，与传统的 GaN-HEMT 器件相比，双层 T 栅极 AlN/GaN HEMT 实现了 45% 的击穿电压增量。此外，它还揭示了 7.9 Tera Hertz Volt 的卓越约翰逊品质因数。因此，AlN/GaN/AlGaN HEMT 上的双层 T 型门是 60 GHz V 波段卫星应用的最佳器件。