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60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites

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Abstract

The influence of double deck T-gate on LG = 0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate offer fMAX of 107 Giga Hertz, fT of 60 Giga Hertz and the breakdown voltage of 136 Volts. Furthermore, it produces the maximum-transconductance and drain-current of 0.187 Siemens/mm and 0.41 Ampere/mm respectively. In addition, the lateral electric-field noticed at gate-edge shows 2.1 × 106 Volts/cm. Besides, the double deck T-gate AlN/GaN HEMT achieves a 45% increment in breakdown voltage compared to traditional GaN-HEMT device. Moreover, it reveals a remarkable Johnson figure-of-merit of 7.9 Tera Hertz Volt. Therefore, the double deck T-gate on AlN/GaN/AlGaN HEMT is the superlative device for 60 GHz V-band satellite application.

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Acknowledgements

The authors acknowledge the Centre for Research in Semiconductor Devices, Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore, India for providing all facilities to carry out this research work.

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Authors and Affiliations

  1. Department of ECE, Karunya Institute of Technology and Sciences, Coimbatore, Tamil Nadu, India

    A. S. Augustine Fletcher, D. Nirmal & K. Husna Hamza

  2. Department of ECE, SR University, Warangal, Telangana, India

    J. Ajayan

  3. Department of ECE, Sri Ramakrishna Engineering College, Coimbatore, Tamil Nadu, India

    L. Arivazhagan

  4. Department of ECE, Anil Neerukonda Institute of Technology and Sciences, Vizag, Andra Pradesh, India

    P. Murugapandiyan

Authors
  1. A. S. Augustine Fletcher
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  2. D. Nirmal
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  4. L. Arivazhagan
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  5. K. Husna Hamza
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  6. P. Murugapandiyan
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Contributions

1. A.S. Augustine Fletcher- TCAD Simulation and paper writing.

2. D. Nirmal- Idea and concept.

3. J. Ajayan-Idea and concept.

4. L. Arivazhagan- Idea and concept.

5. Husna Hamza- Paper editing and English correction.

6. P. Murugapandian-Paper editing and English correction.

Corresponding author

Correspondence to D. Nirmal.

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Fletcher, A.S.A., Nirmal, D., Ajayan, J. et al. 60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites. Silicon 14, 5941–5949 (2022). https://doi.org/10.1007/s12633-021-01367-y

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