In the present work, we investigated the thin film properties, stability, and surface defects of various compositions of indium gallium zinc oxide (IGZO) and indium zinc oxide (IZO) thin films. The thin films of IGZO and IZO were obtained through the solution processing route and deposited using the spin coating technique. All films were found to be amorphous with roughness below 2.0 nm. Further, it was established that the introduction of gallium helps in controlling the electrical resistivity and stabilizing the amorphous phase of IGZO films. The time-dependent study of IGZO and IZO thin films reveals that the films remain structurally stable for one month. However, a slight change in the morphology can be seen after 13 days. The films which seem to be uniform and smooth under an optical microscope also contain few dark spots as well. These dark spots upon close investigation using atomic force microscopy (AFM) and electron probe microscope analyzer (EPMA) reveal that they are the part of films themselves, stand in a vertical position, and the composition on these spots is high in indium content. Simultaneously, the measured composition of the spot-free surface is always less in indium content in comparison to the expected composition. In this study, our findings predict that in the case of solution-processed IGZO and IZO thin films there is a possibility of movement of indium ions to form a surface defect, which in turn can lead to the poor performance of IGZO and IZO based devices.

在目前的工作中，我们研究了氧化铟镓锌 (IGZO) 和氧化铟锌 (IZO) 薄膜的各种成分的薄膜特性、稳定性和表面缺陷。IGZO 和 IZO 薄膜通过溶液处理途径获得，并使用旋涂技术沉积。发现所有薄膜都是无定形的，粗糙度低于 2.0 nm。此外，已确定引入镓有助于控制电阻率和稳定 IGZO 膜的非晶相。对 IGZO 和 IZO 薄膜的时间依赖性研究表明，这些薄膜在一个月内保持结构稳定。然而，在 13 天后可以看到形态的轻微变化。在光学显微镜下看起来均匀光滑的薄膜也几乎没有黑点。使用原子力显微镜 (AFM) 和电子探针显微镜分析仪 (EPMA) 仔细研究这些黑点后，发现它们是薄膜本身的一部分，处于垂直位置，并且这些点上的成分中铟含量很高。同时，与预期成分相比，无斑点表面的测量成分的铟含量总是较少。在这项研究中，我们的研究结果预测，在溶液处理的 IGZO 和 IZO 薄膜的情况下，铟离子有可能移动以形成表面缺陷，这反过来又会导致基于 IGZO 和 IZO 的器件性能不佳. 并且这些斑点的成分中铟含量很高。同时，与预期成分相比，无斑点表面的测量成分的铟含量总是较少。在这项研究中，我们的研究结果预测，在溶液处理的 IGZO 和 IZO 薄膜的情况下，铟离子有可能移动以形成表面缺陷，这反过来又会导致基于 IGZO 和 IZO 的器件性能不佳. 并且这些斑点的成分中铟含量很高。同时，与预期成分相比，无斑点表面的测量成分的铟含量总是较少。在这项研究中，我们的研究结果预测，在溶液处理的 IGZO 和 IZO 薄膜的情况下，铟离子有可能移动以形成表面缺陷，这反过来又会导致基于 IGZO 和 IZO 的器件性能不佳.