We investigated highly mismatched InAsSb photodiodes (PDs) grown on GaAs substrates working in the long-wavelength-infrared range (8–12 μm). Because of their low absorption coefficient levels and high Auger recombination rates, InAsSb PDs suffer from several difficulties, including low responsivity and low resistance levels at room temperature. Additionally, the large lattice mismatch between the active layer and substrate material introduces a high density of dislocations and thus degrades performance. In the work described in this report, we realized high-performance InAs_0.13Sb_0.87 PDs by reducing the density of dislocations as a result of applying a dislocation filter structure, as well as by optimizing interference within the active layer. The resulting device (cut-off wavelength of about 11 μm) showed, at room temperature, a resistance R ₀ of 90 kΩ and responsivity R _i of 0.47 mA W⁻¹ at a wavelength of 9.5 μm, leading to a high detectivity D ^* of 1.2 10⁸ cm Hz^1/2 W⁻¹, which is suitable for detecting alcohol.

我们研究了在长波长红外范围 (8–12 μ m)内工作的 GaAs 衬底上生长的高度失配的 InAsSb 光电二极管 (PD )。由于它们的低吸收系数水平和高俄歇复合率，InAsSb PD 面临一些困难，包括室温下的低响应性和低电阻水平。此外，有源层和衬底材料之间的大晶格失配会引入高密度的位错，从而降低性能。在本报告中描述的工作中，我们实现了高性能 InAs _0.13 Sb _0.87由于应用位错滤波器结构而降低位错密度，以及通过优化有源层内的干扰，PDs。所得器件（截止波长约为 11 μ m）在室温下显示出90 kΩ的电阻R ₀和在 9.5 μ m波长下的响应度R _i为 0.47 mA W ^-1，从而实现了高检测率D ^* of 1.2 10 ⁸ cm Hz ^1/2 W ^-1，适用于检测酒精。