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Single event effects of SiC diode demonstrated by pulsed-laser two photon absorption
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2021-09-06 , DOI: 10.1016/j.microrel.2021.114364
ShiPeng Shangguan 1 , YingQi Ma 1, 2 , JianWei Han 1, 2 , YiXin Cui 1, 2 , YingHao Wang 1 , Rui Chen 1, 2 , YaNan Liang 1 , Xiang Zhu 1, 2 , Yue Li 1
Affiliation  

By an effective energy model in the device under laser single event effects (SEE) test, a two-photon absorption (TPA) of pulsed laser energy transmission mechanism model vs heavy ion linear energy transfer (LET) for SEE have been established. Based on 4H Silicon Carbide (4H-SiC) diodes material parameters which should be considered for SEE) irradiated by TPA of pulsed laser, model for TPA of pulsed laser front-side SEE testing is built. Testing results show that model can give effective SEE laser energies. Meanwhile, relationship between effective laser energy and equivalent LET (ELET) has been validated. Single event transient (SET), permanent damage, and single event burnt-out (SEB) of 4H-SiC diode can be triggered by TPA of pulsed laser, and equivalent LET of pulsed laser energy is consistent with heavy ion LET.



中文翻译:

脉冲激光二光子吸收证明 SiC 二极管的单事件效应

通过激光单事件效应(SEE)测试下器件中的有效能量模型,建立了SEE的脉冲激光能量传输机制模型与重离子线性能量转移(LET)的双光子吸收(TPA)模型。基于脉冲激光TPA辐照SEE应考虑的4H碳化硅(4H-SiC)二极管材料参数,建立了脉冲激光正面SEE测试的TPA模型。测试结果表明,该模型可以给出有效的 SEE 激光能量。同时,验证了有效激光能量与等效LET(ELET)之间的关系。脉冲激光的TPA可以触发4H-SiC二极管的单粒子瞬态(SET)、永久损坏和单粒子烧毁(SEB),脉冲激光能量的等效LET与重离子LET一致。

更新日期:2021-09-07
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