Single event effects of SiC diode demonstrated by pulsed-laser two photon absorption
Introduction
Silicon carbide (SiC) and gallium nitride (GaN) are two types of wide band gap semiconductors, which have characterizations of high electron mobility, saturated electron drift velocity, critical electric field, thermal conductivity, as well as inherently radiation hard nature [1], [2] in some radiation effects. For properties mentioned above make wide band gap semiconductors promising materials for the next generation power devices, and also are expected to play a major role in future terrestrial and space power systems [3].
As for SiC power device, SEB failure and permanent damage, or SETwere reported induced by heavy ions, protons, neutrons, pulsed laser which are by University of Bordeaux [3], Vanderbilt University [4], [5], Japan Atomic Energy Agency(JAEA) [6], [7], [8], [9], Infineon company [10], University Catholique de Louvain [11], CoolCAD electronics company [12], Interuniversity Microelectronics Centre (IMEC) [13] etc. SEE mechanisms are well studied by testing methods mentioned above which can solve reliability issues of SiC-based power systems in space and terrestrial applications. However, as for the pulsed laser, laser energy transmission mechanism and SEE effective energy model in device active part vs heavy ion LET, as well as the TPA parameters for SiC have not been fully researched.
In this paper, laser TPA energy transmission mechanism and effective energy model in device active part vs heavy ion LET for SEE has been established, and also key optical parameters in 4H-SiC Schottky barrier diodes (SBD) and TPA coefficient were investigated. SEB, permanent damage and SET have been induced in the device by pulsed laser TPA method. Laser effective energy equivalent LET (ELET) vs heavy ion LET has been validated for the device, which will help quantitatively estimate the SEB mechanism.
Section snippets
Mechanism for pulsed laser TPA SEE effective energy vs heavy ion LET
According to the wavelength and number of photons absorbed by electron hole pairs generated by laser irradiation on semiconductor, it can be divided into single photon absorption (SPA), TPA, multi photon absorption (MPA), etc. [12], [13]. TPA means that the electron must absorb two photons at the same time in order to transition from low energy level to high energy level, and the energy of two photons must be greater than the difference between the two energy levels. Therefore, the beam power
Experimental sample and results
The 4H-SiC Schottky diode is tested by femto-second pulsed laser single event effects facility (FPLSEEF) from National Space Science Center (NSSC), the Chinese Academy of Sciences (CAS). The laser consists of nominally 35 fs full-width-at-half-maximum (FWHM) optical pulses at 260 nm–1600 nm, with a pulse repetition rate of 5 kHz, at one single laser pulse shot energy at 1 mJ(5 kHz). Resolution of the XYZ stage is 1 μm. Microscope objective is 50×.
Conclusions
A single event effects (SEE) effective energy and equivalent LET model by pulsed laser TPA of 4H-SiC has been established. As for material parameters should be considered, a SiC SBD has been tested by the pulsed laser which induced SET, SEB, and permanent damage. The relationship between effective laser energy and equivalent LET (ELET) is also validated by comparing laser and heavy ion results.
Both theoretical and experimental results show that our TPA laser effective energy model and ELET
CRediT authorship contribution statement
I have made substantial contributions to the conception or design of the work; or the acquisition, analysis, or interpretation of data for the work. AND I have drafted the work or revised it critically for important intellectual content; AND I agree to be accountable for all aspects of the work in ensuring that questions related to the accuracy or integrity of any part of the work are appropriately investigated and resolved.
All persons who have made substantial contributions to the work
Declaration of competing interest
We declare that we have no financial and personal relationships with other people or organizations that can inappropriately influence our work, there is no professional or other personal interest of any nature or kind in any product, service and/or company that could be construed as influencing the position presented in, or the review of, the manuscript entitled.
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2023, Qiangjiguang Yu Lizishu/High Power Laser and Particle BeamsMultiphoton Absorption in Gallium Nitride and Silicon Carbide Photodiodes: Applications for Single-Event Effects Tests
2023, IEEE Transactions on Nuclear ScienceThin SiС and Gan-Based Films and Structures: Production and Properties
2022, Key Engineering Materials