This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects of both vertical tunneling and lateral tunneling phenomena to improve the device performance. Attributes of the ETL, its thickness (t_epi) and doping concentration (N_epi) are varied and their impact on device electrical parameters such as transfer characteristic, output performance, subthreshold swing (SS), and threshold voltage (V_T) is highlighted. It is observed that both t_epi and N_epi significantly influence the different electrical parameters of the ETL based TFET architecture.

本文通过 3D 技术计算机辅助设计 (TCAD) 模拟报告了基于外延层 (ETL) 的栅极调制 (GM-TFET) 的性能。该架构利用垂直隧道效应和横向隧道效应来提高器件性能。ETL 的属性、其厚度 (t _epi ) 和掺杂浓度 (N _epi ) 各不相同，并且突出显示了它们对器件电气参数的影响，例如传输特性、输出性能、亚阈值摆幅 (SS) 和阈值电压 (V _T ) . 据观察，t _Epi和 N _{epi 都}显着影响基于 ETL 的 TFET 架构的不同电气参数。