Hydrogen peroxide (H₂O₂) plays a vital role in some of the metal assisted chemical etching (MACE) processes for silicon. However, it evaporates easily during etching at higher temperatures and this makes the process difficult to control. As a result, the MACE process for the inverted pyramid (IP) texturization that uses H₂O₂ is industrially unattractive. Herein, we proposed an innovative method to monitor H₂O₂ during the MACE process with an electrochemical method. The screen-printed electrode (SPE) modified by reduced graphene oxide (RGO) was used. The electrode demonstrated excellent electrochemical performance and could monitor the changes of H₂O₂ concentration with cyclic voltammetry (CV). Interestingly, the presence of copper (Cu) in the etching solution catalyzed not only the etching process, but also the electrochemical reduction of H₂O₂. With a consistent H₂O₂ concentration measured by the electrode, the reflectivity and structural morphology of the etched wafers could be controlled easily. The electrode is disposable, and the fabrication process is rapid and inexpensive, which is suitable for real time control of the MACE processes.

过氧化氢 (H ₂ O ₂ ) 在一些用于硅的金属辅助化学蚀刻 (MACE) 工艺中起着至关重要的作用。然而，它在较高温度下的蚀刻过程中很容易蒸发，这使得该过程难以控制。因此，用于使用 H ₂ O ₂的倒金字塔 (IP) 纹理化的 MACE 工艺在工业上没有吸引力。在此，我们提出了一种使用电化学方法在 MACE 过程中监测 H ₂ O ₂的创新方法。使用由还原氧化石墨烯 (RGO) 改性的丝网印刷电极 (SPE)。该电极表现出优异的电化学性能，可以监测H ₂ O的变化₂浓度循环伏安法 (CV)。有趣的是，蚀刻溶液中铜 (Cu) 的存在不仅催化了蚀刻过程，还催化了 H ₂ O ₂的电化学还原。通过电极测量一致的 H ₂ O ₂浓度，可以轻松控制蚀刻晶片的反射率和结构形态。电极是一次性的，制造过程快速且廉价，适合MACE过程的实时控制。