Abstract

In situ chemical polymerization technique was used to synthesize polyaniline (PANI) and polyaniline сadmium oxide (PANI/CdO) composites with different weight percentage of CdO dopant. Structure and morphology of pure and synthesized nanocomposites were characterized by XRD and SEM techniques. Different weight percentage of CdO dopant was used to verify their effects on these characteristics. The XRD results represent better crystallinity and show more intense peaks of PANI/CdO composites with addition of CdO nano particles. The SEM investigations of PANI/CdO сomposites show well intercalary, agglomerated platelet as well as flaky structure. Current density−voltage (J–V) characteristics of ITO/PANI/Cu, ITO/PANI-CdO composites/Cu fabricated Schottky diodes were investigated at room and some elevated temperatures in the potential window ±20 V. The junction parameters such as saturation current density, ideality factor and barrier height were calculated and found to be influenced by the doping concentration of CdO as well as temperature variation. The electrical behavior of PANI with CdO was found to be in good agreement with the thermionic emission model for the Schottky barrier type devices.

中文翻译：

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基于铜电极和聚苯胺氧化镉 (PANI/CdO) 复合材料的肖特基二极管的制造

摘要

采用原位化学聚合技术合成了具有不同重量百分比的 CdO 掺杂剂的聚苯胺 (PANI) 和聚苯胺氧化镉 (PANI/CdO) 复合材料。通过 XRD 和 SEM 技术表征纯纳米复合材料和合成纳米复合材料的结构和形态。使用不同重量百分比的 CdO 掺杂剂来验证它们对这些特性的影响。XRD 结果表明，加入 CdO 纳米颗粒后，PANI/CdO 复合材料的结晶度更好，峰更强烈。PANI/CdO 复合材料的 SEM 研究显示出良好的夹层、聚集的血小板以及片状结构。电流密度−电压 ( J – V) 在室温和一些升高的温度下在电位窗口 ±20 V 下研究了 ITO/PANI/Cu、ITO/PANI-CdO 复合材料/Cu 制造的肖特基二极管的特性。 结参数，如饱和电流密度、理想因子和势垒高度计算并发现受 CdO 的掺杂浓度以及温度变化的影响。发现 PANI 与 CdO 的电学行为与肖特基势垒型器件的热电子发射模型非常吻合。