Abstract

The results of studying the resistivity, magnetoresistance, and Hall coefficient of thin films of bismuth and the bismuth–antimony system on a borosilicate-glass substrate under plane tensile strain are presented. Deformation is created by a specially developed method that allows a change in its magnitude directly during measurement of the film properties. The films are obtained by thermal evaporation in vacuum. Varying the technological modes made it possible to obtain films of various structures: from small blocks to single crystal. Based on the experimental results, within the framework of the two-band approximation, the concentrations of charge carriers and the positions of the energy extrema of the valence and conduction bands relative to the chemical potential level are calculated. It is shown that the two-band approximation is insufficient for describing the properties of films of the studied compositions under plane tensile strain.

中文翻译：

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平面拉伸应变条件下铋-锑薄膜的电磁特性

摘要

展示了在平面拉伸应变下硼硅玻璃基板上的铋薄膜和铋-锑系统的电阻率、磁阻和霍尔系数的研究结果。变形是通过一种专门开发的方法产生的，该方法允许在测量薄膜特性期间直接改变其大小。这些薄膜是通过真空热蒸发获得的。改变技术模式使得获得各种结构的薄膜成为可能：从小块到单晶。基于实验结果，在双能带近似的框架内，计算了电荷载流子的浓度以及价带和导带的能量极值相对于化学势能级的位置。