Complementary metal-oxide-semiconductor inverters featuring steep voltage-transfer characteristics (VTC) were successfully fabricated on 4H-SiC(0001) substrates. Even without nitridation of the MOS interfaces, well-balanced n- and p-channel field-effect transistors were realized by means of ultrahigh-temperature gate oxidation (HTO) at 1600 C under reduced oxygen partial pressure. Improvements in the performances of both n- and p-channel SiC metal-oxide-semiconductor field-effect transistors were achieved by subsequently performing forming gas annealing (FGA) at 1200 C, leading to mostly symmetric VTC with negligible hysteresis. The effect of HTO and subsequent FGA at high temperatures was verified from the stable and improved performance of 23-stage ring oscillators over a wide temperature range.

在 4H-SiC(0001) 衬底上成功制造了具有陡峭电压传输特性 (VTC) 的互补金属氧化物半导体逆变器。即使没有对 MOS 界面进行氮化，也可以通过在 1600 摄氏度下在降低的氧分压下进行超高温栅极氧化 (HTO) 来实现平衡良好的 n 沟道和 p 沟道场效应晶体管。通过随后在 1200°C 下进行合成气体退火 (FGA)，n 和 p 沟道 SiC 金属氧化物半导体场效应晶体管的性能得到改善，导致大部分对称 VTC，滞后可忽略不计。HTO 和后续 FGA 在高温下的效果从 23 级环形振荡器在很宽的温度范围内的稳定和改进性能得到了验证。