In this work, nickel sulphide (NiS)–reduced graphene oxide (rGO) (NiS–rGO) has been used as a cathode in dye-sensitized solar cell (DSSC). The cathode has been prepared via liquid phase deposition technique assisted with modified Hummer’s method and spin-coating technique. The effect of annealing temperature on the properties of NiS–rGO has been reported. The influence of temperature on performance of the device utilizing NiS–rGO cathode has also been investigated. The annealing temperature ranges from 320 to 400°C. The sample shows minor phase of NiS and rGO. The device using the cathode annealed at 380°C produced the best power conversion efficiency (η) of 0.50%. This champion device also yielded the highest V_oc of 0.72 V. This is because this device owns the lowest sheet resistance (R_s) of 11.50 Ω per square. The photovoltaic result of this work signifies that NiS–rGO has the potential as a substitution for platinum as cathode for DSSC.

在这项工作中，硫化镍 (NiS)-还原氧化石墨烯 (rGO) (NiS-rGO) 已被用作染料敏化太阳能电池 (DSSC) 的阴极。阴极是通过液相沉积技术制备的，辅以改进的 Hummer 方法和旋涂技术。已经报道了退火温度对 NiS-rGO 性能的影响。还研究了温度对利用 NiS-rGO 阴极的器件性能的影响。退火温度范围为 320 至 400°C。样品显示了 NiS 和 rGO 的次要相。使用在 380°C 下退火的阴极的器件产生了0.50%的最佳功率转换效率 ( η )。这个冠军设备也产生了最高的V _oc0.72 V。这是因为该器件具有每平方 11.50 Ω的最低薄层电阻 ( R _s )。这项工作的光伏结果表明 NiS-rGO 具有替代铂作为 DSSC 阴极的潜力。