The results of theoretical calculations show the possibility of increasing the thermoelectric figure of merit in solid solutions of Mg₂Si–Mg₂Sn using nanoinclusions (NEAT approach). The thermoelectric properties of the Mg₂Si_0.2Sn_0.8 solid solution, doped with antimony to obtain the optimal concentration of free electrons, with the addition of SiO₂ and TiO₂ impurities as additional scattering centers were studied. During the preparation of solid solution samples by hot pressing, nanoparticles of silicon dioxide and titanium dioxide of 15–200 nm in size at a concentration of 0.5–1 vol % were added. The coefficients of thermopower, electrical conductivity, and thermal conductivity were measured on these samples in the temperature range from 300 to 800 K. An insignificant decrease in thermal conductivity was shown for samples containing additional impurities. In this case, an increase in the thermoelectric figure of merit was not observed due to a decrease in the mobility of majority carriers.

理论计算结果表明，使用纳米夹杂物（NEAT 方法）可以提高 Mg ₂ Si-Mg ₂ Sn固溶体中的热电品质因数。Mg ₂ Si _0.2 Sn _0.8固溶体的热电性能，掺杂锑以获得最佳的自由电子浓度，添加SiO ₂和TiO ₂杂质作为额外的散射中心进行了研究。在通过热压制备固溶体样品的过程中，加入浓度为 0.5-1 vol% 的 15-200 nm 的二氧化硅和二氧化钛纳米颗粒。在 300 到 800 K 的温度范围内对这些样品测量了热电势、电导率和热导率的系数。对于含有额外杂质的样品，热导率的降低并不显着。在这种情况下，由于多数载流子迁移率的降低，没有观察到热电品质因数的增加。