The morphology of the interlayer surface and the spectra of differential tunneling conductivity in solid solutions (Bi, Sb, Sn, Ge)₂(Te, Se)₃ has been studied by scanning tunneling microscopy and scanning tunneling spectroscopy. Surface defects associated with distortions of surface electronic states as a result of atomic substitution and with the formation of intrinsic defects formed during the growth of solid solutions are systematized. The position of the Dirac point and its fluctuations relative to the mean value are determined, the levels of impurity surface defects are found, and their energy depending on the composition of the solid solution, the value of the Seebeck coefficient, and the power parameter are calculated. The surface concentration of Dirac fermions is calculated and the compositions are established in which the contribution of surface states increases due to an increase in the concentration of fermions and due to an increase in the Fermi velocity and mobility of fermions in the surface layer.

夹层表面形貌和固溶体（Bi、Sb、Sn、Ge）₂（Te、Se）₃中微分隧穿电导率光谱已经通过扫描隧道显微镜和扫描隧道光谱进行了研究。与由于原子取代导致的表面电子态畸变和固溶体生长过程中形成的固有缺陷相关的表面缺陷被系统化。确定狄拉克点的位置及其相对于平均值的波动，发现杂质表面缺陷的水平，其能量取决于固溶体的组成、塞贝克系数的值和功率参数为计算。