Nano-SiO₂ particles have been incorporated into high-performance poly(ether ketone ketone) (PEKK) polymers to prepare satisfactory nanocomposite substrates for fifth-generation (5G) communication. Significantly lower dielectric constant (ε_r), dielectric loss (tan δ), and linear coefficient of thermal expansion (CTE) were found for each PEKK_a^xSiO₂^y nanocomposite film series incorporated with proper loadings of nano-SiO₂ particles. The dielectric characteristics measured for each PEKK_a^xSiO₂^y nanocomposite film series decreased to a minimum as the nano-SiO₂ loading approached an optimum value. Satisfactory ε_r (2.74 at 1 MHz), tan δ (0.00309 at 1 MHz), and linear CTE (~ 37 × 10⁻⁶/°C) for 5G high-speed communication were found for the nanocomposite film modified with the optimum nano-SiO₂ loading of 10 wt.%. The porosity values measured for each PEKK_a^xSiO₂^y film series remained nearly zero then increased abruptly as the nano-SiO₂ loading exceeded 10 wt.%. The free volume characteristics evaluated for each PEKK_a^xSiO₂^y film series increased to a maximum as the nano-SiO₂ loading reached the optimum value of 10 wt.%. Possible explanations for the noticeably reduced dielectric and linear CTE characteristics found for PEKK_a^xSiO₂^y composite films are proposed.

纳米SiO ₂颗粒已被掺入高性能聚（醚酮酮）（PEKK）聚合物中，以制备令人满意的用于第五代（5G）通信的纳米复合基材。发现每个PEKK _a ^x SiO ₂ ^y纳米复合膜系列与适当的纳米SiO ₂颗粒负载量相结合，介电常数（ε _r）、介电损耗（tan  δ）和线性热膨胀系数（CTE）显着降低。每个 PEKK _a ^x SiO ₂ ^y纳米复合薄膜系列测量的介电特性降低到最小，因为纳米 SiO ₂负荷接近最佳值。对于 5G 高速通信，使用最佳纳米改性的纳米复合薄膜具有令人满意的ε _r（1 MHz 时为 2.74）、tan  δ（1 MHz 时为 0.00309）和线性 CTE（~ 37 × 10 ^-6 /°C）。 -SiO ₂负载为10重量％。对于每个 PEKK _a ^x SiO ₂ ^y薄膜系列测量的孔隙率值几乎保持为零，然后随着纳米 SiO ₂负载量超过 10 重量％而突然增加。每个 PEKK _a ^x SiO ₂ ^y薄膜系列评估的自由体积特性随着纳米 SiO _{2 的}增加而增加到最大值负载达到最佳值 10 wt.%。提出了对 PEKK _a ^x SiO ₂ ^y复合膜显着降低的介电和线性 CTE 特性的可能解释。