Abstract
Nano-SiO2 particles have been incorporated into high-performance poly(ether ketone ketone) (PEKK) polymers to prepare satisfactory nanocomposite substrates for fifth-generation (5G) communication. Significantly lower dielectric constant (εr), dielectric loss (tan δ), and linear coefficient of thermal expansion (CTE) were found for each PEKKaxSiO2y nanocomposite film series incorporated with proper loadings of nano-SiO2 particles. The dielectric characteristics measured for each PEKKaxSiO2y nanocomposite film series decreased to a minimum as the nano-SiO2 loading approached an optimum value. Satisfactory εr (2.74 at 1 MHz), tan δ (0.00309 at 1 MHz), and linear CTE (~ 37 × 10−6/°C) for 5G high-speed communication were found for the nanocomposite film modified with the optimum nano-SiO2 loading of 10 wt.%. The porosity values measured for each PEKKaxSiO2y film series remained nearly zero then increased abruptly as the nano-SiO2 loading exceeded 10 wt.%. The free volume characteristics evaluated for each PEKKaxSiO2y film series increased to a maximum as the nano-SiO2 loading reached the optimum value of 10 wt.%. Possible explanations for the noticeably reduced dielectric and linear CTE characteristics found for PEKKaxSiO2y composite films are proposed.
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Pan, D.M., Zhou, G.K., Zhi, X.D. et al. Performance of Nano-SiO2-Filled Poly(ether ketone ketone) Substrate for Fifth-Generation Communication. J. Electron. Mater. 50, 5327–5337 (2021). https://doi.org/10.1007/s11664-021-09060-x
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DOI: https://doi.org/10.1007/s11664-021-09060-x