A typical high-efficiency solar cell device needs the best lattice matching between different constituent layers to mitigate the open-circuit voltage loss. In the present work, the physical properties of CdS thin films are investigated where films with 100 nm thickness were fabricated on the different types of substrates viz. soda–lime glass, indium-doped tin oxide (ITO)- and fluorine-doped tin oxide (FTO)-coated glass substrates, and silicon wafer using electron beam evaporation. The X-ray diffraction patterns confirmed that deposited thin films showed cubic phase and had (111) as predominant orientation where the structural parameters were observed to be varied with nature of substrates. The ohmic behaviour of the CdS films was disclosed by current–voltage characteristics, whereas the scanning electron microscopy micrograph revealed the uniform deposition of the CdS films with the presence of round-shaped grains. The elemental analysis confirmed the CdS films deposition where the Cd/S weight percentage ratio was changed with nature of substrates. The direct energy band gap was observed in the 1.63–2.50 eV range for the films grown on different substrates. The investigated properties of thin CdS layers demonstrated that the selection of substrate (in terms of nature) during device fabrication plays a crucial role.

典型的高效太阳能电池器件需要不同组成层之间的最佳晶格匹配，以减轻开路电压损失。在目前的工作中，研究了 CdS 薄膜的物理性质，其中在不同类型的基板上制造了 100 nm 厚的薄膜。钠钙玻璃、掺铟氧化锡 (ITO) 和掺氟氧化锡 (FTO) 涂层的玻璃基板，以及使用电子束蒸发的硅晶片。X 射线衍射图证实沉积的薄膜显示立方相并且具有 (111) 作为主要取向，其中观察到结构参数随基材的性质而变化。CdS 薄膜的欧姆行为由电流-电压特性揭示，而扫描电子显微镜显微照片显示 CdS 薄膜均匀沉积，存在圆形晶粒。元素分析证实了 CdS 薄膜沉积，其中 Cd/S 重量百分比随基材的性质而变化。对于在不同衬底上生长的薄膜，在 1.63-2.50 eV 范围内观察到直接能带隙。CdS 薄层的研究性质表明，器件制造过程中衬底的选择（就性质而言）起着至关重要的作用。在不同基板上生长的薄膜的 50 eV 范围。研究的 CdS 薄层的特性表明，器件制造过程中衬底的选择（就性质而言）起着至关重要的作用。在不同基板上生长的薄膜的 50 eV 范围。CdS 薄层的研究性质表明，器件制造过程中衬底的选择（就性质而言）起着至关重要的作用。