This study presents conductance modulation in a Pt/TiO₂/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.

中文翻译：

---

在原子层沉积的 Pt/TiO2/HfAlOx/TiN RRAM 器件的自顺应区域中逐渐改变电导

本研究介绍了 Pt/TiO _{2 中的}电导调制/HfAlOx/TiN 电阻式存储器件，用于神经形态系统应用。首先，原子层沉积膜的化学和材料特性通过 X 射线光电子能谱深度分析进行验证。低阻状态由顺从电流有效控制，高阻状态由复位停止电压调节。在双极电阻开关中实现了稳定的耐久性和保持性。当施加 1 mA 顺从电流时，在复位过程中仅观察到逐渐切换。在突然的凝固过渡之后使用自我顺应来实现逐渐凝固的过程。最后，在顺应电流区域中获得了 10 个周期的长时程增强和抑制，用于神经形态系统应用。