Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Conflicts of Interest
References
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Ryu, H.; Kim, S. Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device. Metals 2021, 11, 1199. https://doi.org/10.3390/met11081199
Ryu H, Kim S. Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device. Metals. 2021; 11(8):1199. https://doi.org/10.3390/met11081199
Chicago/Turabian StyleRyu, Hojeong, and Sungjun Kim. 2021. "Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device" Metals 11, no. 8: 1199. https://doi.org/10.3390/met11081199