Abstract

The studies of wide-gap semiconductor materials using electron-beam induced current (EBIC) method are reviewed. The main methods for measuring the diffusion length of nonequilibrium carriers in semiconductor structures using the EBIC method in a scanning electron microscope are analyzed. The experimental results of measuring the diffusion lengths in GaN, Ga₂O₃, 4H-SiC, and ZnO are considered. The reliability of the obtained values is discussed. The EBIC possibilities for detecting dislocations and studying their recombination activity are demonstrated. The strategy for achieving high lateral resolution at EBIC measurements in crystals with submicron diffusion length is discussed. Examples of the influence of irradiation of wide-gap semiconductor materials by a low-energy electron beam on their electrical and optical properties are shown. The results of studying the recombination-enhanced dislocation glide in GaN and 4H-SiC under their electron-beam irradiation in a scanning electron microscope are presented.

中文翻译：

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使用电子束感应电流法研究宽禁带半导体

摘要

综述了利用电子束感应电流（EBIC）方法对宽禁带半导体材料的研究。分析了在扫描电子显微镜下使用EBIC方法测量半导体结构中非平衡载流子扩散长度的主要方法。测量GaN、Ga ₂ O _{3 中}扩散长度的实验结果、4H-SiC 和 ZnO 被考虑在内。讨论了所获得值的可靠性。EBIC 检测位错和研究其重组活动的可能性得到了证明。讨论了在具有亚微米扩散长度的晶体中实现 EBIC 测量的高横向分辨率的策略。显示了低能电子束照射宽禁带半导体材料对其电学和光学性质的影响的例子。介绍了在扫描电子显微镜下研究 GaN 和 4H-SiC 在电子束照射下的复合增强位错滑移的结果。