Abstract

The results of recent studies of the structural morphological transformations of Si(111) and Si(100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) are presented. It is established that high-temperature sublimation from extremely wide Si(111) terraces occurs at a smaller activation energy (3.77 eV) than from the vicinal surface (4.04 eV). A nonmonotonic change in the kinetics of step bunching during a smooth transition from sublimation to growth on the Si(100) surface is recorded. The structural transformations caused by electromigration of positively charged Sn adatoms on the reconstructed Si(111) surface are demonstrated. It is shown that Si(111) surface etching under exposure to a Se molecular beam occurs in a layer-by-layer mode due to the desorption of SiSe₂ molecules with activation energy of 2.65 eV.

中文翻译：

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用于分析硅表面过程的原位反射电子显微镜：杂质原子的升华、电迁移和吸附

摘要

介绍了使用原位超高真空反射电子显微镜 (UHV REM) 对 Si(111) 和 Si(100) 表面的结构形态转变的最新研究结果。已经确定，从极宽的 Si(111) 台地高温升华发生在比邻面 (4.04 eV) 更小的活化能 (3.77 eV) 下。记录了在 Si(100) 表面从升华到生长的平滑过渡期间阶梯聚束动力学的非单调变化。演示了由重建的 Si(111) 表面上带正电的 Sn 吸附原子的电迁移引起的结构转变。结果表明，由于SiSe ₂的解吸，在暴露于Se分子束下的Si(111)表面蚀刻以逐层模式发生 活化能为 2.65 eV 的分子。