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In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms

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Abstract

The results of recent studies of the structural morphological transformations of Si(111) and Si(100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) are presented. It is established that high-temperature sublimation from extremely wide Si(111) terraces occurs at a smaller activation energy (3.77 eV) than from the vicinal surface (4.04 eV). A nonmonotonic change in the kinetics of step bunching during a smooth transition from sublimation to growth on the Si(100) surface is recorded. The structural transformations caused by electromigration of positively charged Sn adatoms on the reconstructed Si(111) surface are demonstrated. It is shown that Si(111) surface etching under exposure to a Se molecular beam occurs in a layer-by-layer mode due to the desorption of SiSe2 molecules with activation energy of 2.65 eV.

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ACKNOWLEDGMENTS

Experiments were performed using equipment of the CKP Nanostruktury.

Funding

This study was supported by the Russian Science Foundation in the parts concerning the analysis of the sublimation processes on wide-terrace surfaces (grant no. 14-22-00143), analysis of the processes occurring during germanium deposition (grant no. 19-72-30023), and Si surface etching with a Se molecular beam (grant no. 18-72-10063) and the Russian Foundation for Basic Research (grant no. 16-32-60199) in the part concerning the analysis of the step bunching on the Si(100) surface.

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  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    D. I. Rogilo, S. V. Sitnikov, E. E. Rodyakina, A. S. Petrov, S. A. Ponomarev, D. V. Sheglov, L. I. Fedina & A. V. Latyshev

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  1. D. I. Rogilo
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  2. S. V. Sitnikov
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Correspondence to D. I. Rogilo.

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Translated by Yu. Sin’kov

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Rogilo, D.I., Sitnikov, S.V., Rodyakina, E.E. et al. In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms. Crystallogr. Rep. 66, 570–580 (2021). https://doi.org/10.1134/S1063774521040192

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