Abstract

The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus, the formation by this method of the thin layers with a thickness of about ~1 nm is demonstrated, which allows to obtain a photovoltaic conversion efficiency up to 15.3%. By depositing the luminescent layer on the front side of the ITO/c-Si junctions, which is active in the region of the solar cells sensitivity to the action of UV irradiation, their functionality in the range of 300–1100 nm of the solar spectrum is demonstrated.

中文翻译：

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在紫外光谱范围内具有更高灵敏度的低成本 ITO/n-Si 太阳能电池

摘要

描述了通过硅晶片的氧化形成 ITO/c-Si 结界面的结果。因此，证明了通过这种方法形成厚度约为 1 nm 的薄层，可以获得高达 15.3% 的光伏转换效率。通过在 ITO/c-Si 结的正面沉积发光层，该发光层在太阳能电池对紫外线照射作用敏感的区域内活跃，它们的功能在太阳光谱的 300-1100 nm 范围内被证明。