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Low-Cost ITO/n-Si Solar Cells with Increased Sensitivity in UV Spectrum Range

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Abstract

The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus, the formation by this method of the thin layers with a thickness of about ~1 nm is demonstrated, which allows to obtain a photovoltaic conversion efficiency up to 15.3%. By depositing the luminescent layer on the front side of the ITO/c-Si junctions, which is active in the region of the solar cells sensitivity to the action of UV irradiation, their functionality in the range of 300–1100 nm of the solar spectrum is demonstrated.

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ACKNOWLEDGMENTS

The authors are grateful to the staff of SINTEF Materials and Chemistry A. Ulyashin and A. Thogersen for the measurements of the interfaces of the investigated structures using high-resolution transmission electron microscopy.

Funding

This research was funded by the National Agency for Research and Development of the Republic of Moldova and the State Committee for Science and Technology of the Republic of Belarus, Project no. 19.80013.58.07.07A/BL and by the National Agency for Research and Development of the Republic of Moldova under State Program Project no. 20.80009.5007.03.

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Authors and Affiliations

  1. Institute of Applied Physics, MD-2028, Chisinau, Moldova

    A. Simashkevich, L. Bruc, N. Curmei & D. Serban

  2. Belarusian State University, Institute for Physical Chemical Problems, 220030, Minsk, Belarus

    G. Shevchenko & Yu. Bokshyts

  3. Moldova State University, Research and Innovation Institute, MD-2009, Chisinau, Moldova

    M. Caraman, I. Dementiev & T. Goglidze

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  1. A. Simashkevich
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  2. G. Shevchenko
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  4. L. Bruc
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  5. M. Caraman
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Correspondence to G. Shevchenko, M. Caraman or D. Serban.

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Simashkevich, A., Shevchenko, G., Bokshyts, Y. et al. Low-Cost ITO/n-Si Solar Cells with Increased Sensitivity in UV Spectrum Range. Surf. Engin. Appl.Electrochem. 57, 315–322 (2021). https://doi.org/10.3103/S1068375521030133

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