In this article, the authors are presented the work on the evaluation of structural and third-order nonlinear optical (NLO) properties of lead (Pb)-doped zinc oxide (ZnO) thin films. The nano structured Zn_1-xPb_xO thin films were lay down on the glass substrate at an heating temperature of 350 °C with different Pb-doping concentration (‘x’ ratios of 0, 0.01, 0.05 and 0.1 wt. % of Pb) using the standard spray pyrolysis technique. The powder X-ray diffraction (P-XRD) spectroscopic analysis reveals the polycrystalline existence in the lead doped thin films in evidence with the hexagonal structure. The reformed grain sizes with enhanced doping content was perceived through surface morphological analysis with the help of field emission scanning electron microscopy and are in line with the X-Ray diffraction observations. The upgraded optical band gaps (Eg) were inferred through UV–Vis spectroscopic studies for the tailored films from 3.21 eV (pure ZnO) to 3.34 eV (10 wt. % of Pb). The defect states appearances and photoluminescence properties are discussed for the fabricated thin films using the resulted room temperature photoluminescence (RTPL) spectroscopic data. The third-order NLO parameters were calculated by potentially exposing the prepared thin films to the z-scan analysis under a continuous wave solid state laser at an excitation wavelength of 532 nm. The reverse saturable absorption, excited state absorption and self-defocusing effects were observed from the z-scan test along with the elevated nonlinear absorption coefficient (β) from 4.74 × 10^–4 to 1.05 × 10^–3 (cm/W) and negative nonlinear refractive index \({(n}_{2}\)) from 1.42 × 10^–8 to 5.60 × 10^–8 (cm²W⁻¹). In addition to this, the third-order NLO susceptibility (χ ⁽³⁾) values are also calculated and are augmented from 0.82 × 10^–5 to 1.45 × 10^–4 (esu). An optical limiting (OL) topography with the limiting thresholds was also explored at the experimental wavelength. Hence, the outcome of structural, linear and nonlinear optical studies acknowledged the ability of the Zn_1-xPb_xO thin films in the field of optoelectronic device applications.

在本文中，作者介绍了对掺铅 (Pb) 氧化锌 (ZnO) 薄膜的结构和三阶非线性光学 (NLO) 特性进行评估的工作。纳米结构的 Zn _1-x Pb _x使用标准喷雾热解技术，在 350 °C 的加热温度下，将 O 薄膜铺设在玻璃基板上，并具有不同的 Pb 掺杂浓度（'x' 比例为 0、0.01、0.05 和 0.1 重量%的 Pb）。粉末 X 射线衍射 (P-XRD) 光谱分析揭示了六方结构的铅掺杂薄膜中存在多晶。在场发射扫描电子显微镜的帮助下，通过表面形态分析发现具有增强掺杂含量的重组晶粒尺​​寸，并且与 X 射线衍射观察结果一致。升级后的光学带隙 (Eg) 是通过 UV-Vis 光谱研究推断出的定制薄膜从 3.21 eV（纯 ZnO）到 3.34 eV（10 wt.% Pb）。使用所得室温光致发光 (RTPL) 光谱数据讨论了制造薄膜的缺陷状态外观和光致发光特性。三阶非线性光学参数是通过将制备的薄膜潜在地暴露于 532 nm 激发波长的连续波固态激光下进行 z 扫描分析来计算的。从 z 扫描测试中观察到反饱和吸收、激发态吸收和自散焦效应以及从 4.74 × 10 升高的非线性吸收系数 (β) 三阶非线性光学参数是通过将制备的薄膜潜在地暴露于 532 nm 激发波长的连续波固态激光下进行 z 扫描分析来计算的。从 z 扫描测试中观察到反饱和吸收、激发态吸收和自散焦效应以及从 4.74 × 10 升高的非线性吸收系数 (β) 三阶非线性光学参数是通过将制备的薄膜潜在地暴露于 532 nm 激发波长的连续波固态激光下进行 z 扫描分析来计算的。从 z 扫描测试中观察到反饱和吸收、激发态吸收和自散焦效应以及从 4.74 × 10 升高的非线性吸收系数 (β)^–4至 1.05 × 10 ^–3 (cm/W) 和负非线性折射率\({(n}_{2}\) ) 从 1.42 × 10 ^–8至 5.60 × 10 ^–8 (cm ² W ^-1 ) . 除此之外，还计算了三阶 NLO 磁化率 (χ ⁽³⁾ ) 值，并从 0.82 × 10 ^–5增加到 1.45 × 10 ^–4 (esu)。还在实验波长下探索了具有限制阈值的光学限制 (OL) 形貌。因此，结构、线性和非线性光学研究的结果承认 Zn _1-x Pb _xO薄膜在光电器件领域的应用。