The results of studies of thin Ni–Al films obtained by the resistive thermal evaporation method and having characteristic island sizes of 700–1000 nm with a film thickness of ~500 nm are described. A brief description of the method for producing a film using an installation for creating a high vacuum and subsequent film deposition is presented. The obtained film sample was studied with an optical microscope, a scanning probe microscope, and a Fourier analyzer. The kinetic characteristics of the film, its film, and the characteristic sizes of the islands have been established; regularities in the island structure of the films were sought, and its electrical conductivity has been determined.

描述了通过电阻热蒸发方法获得的薄 Ni-Al 薄膜的研究结果，该薄膜具有 700-1000 nm 的特征岛尺寸，薄膜厚度约为 500 nm。简要描述了使用用于产生高真空和随后薄膜沉积的装置生产薄膜的方法。用光学显微镜、扫描探针显微镜和傅立叶分析仪研究获得的薄膜样品。已建立薄膜的动力学特性、薄膜和岛的特征尺寸；寻找薄膜岛结构的规律，并确定其导电性。