Abstract
The results of studies of thin Ni–Al films obtained by the resistive thermal evaporation method and having characteristic island sizes of 700–1000 nm with a film thickness of ~500 nm are described. A brief description of the method for producing a film using an installation for creating a high vacuum and subsequent film deposition is presented. The obtained film sample was studied with an optical microscope, a scanning probe microscope, and a Fourier analyzer. The kinetic characteristics of the film, its film, and the characteristic sizes of the islands have been established; regularities in the island structure of the films were sought, and its electrical conductivity has been determined.
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Dmitriev, S.F., Ishkov, A.V., Sagalakov, A.M. et al. Study of Surface and Electrical Conductivity of Thin Metal Films of the Ni–Al System. Nanotechnol Russia 16, 261–266 (2021). https://doi.org/10.1134/S2635167621020051
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DOI: https://doi.org/10.1134/S2635167621020051