Technologies based on magnetic skyrmions, such as computational devices that can operate at high speed or with low energy consumption, have been proposed by many researchers. Recently, synthetic antiferromagnetic (SAF) structures have been proposed to increase the stability and mobility of skyrmions by reducing or eliminating the skyrmion Hall effect. Here, we numerically study the current-induced dynamics of skyrmions on SAF bilayer structures. We demonstrate the effective control and manipulation of SAF skyrmions, including directional displacement and alignment. Furthermore, we design SAF-skyrmion-based logic gates, such as the and, or, xor, and not gates. Our design provides guidance for future development of spintronic computing devices that use topological nanoscale spin textures as information carriers.

中文翻译：

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基于合成反铁磁双层 Skyrmions 的逻辑门

许多研究人员已经提出了基于磁性斯格明子的技术，例如可以高速或低能耗运行的计算设备。最近，已经提出合成反铁磁（SAF）结构通过减少或消除斯格明子霍尔效应来增加斯格明子的稳定性和移动性。在这里，我们数值研究了 SAF 双层结构上斯格明子的电流诱导动力学。我们展示了 SAF 斯格明子的有效控制和操纵，包括定向位移和对齐。此外，我们设计了基于 SAF-skyrmion 的逻辑门，例如and , or , xor , and not盖茨。我们的设计为使用拓扑纳米级自旋纹理作为信息载体的自旋电子计算设备的未来发展提供了指导。