Logic Gates Based on Synthetic Antiferromagnetic Bilayer Skyrmions

Mouad Fattouhi, Kai Yu Mak, Yan Zhou, Xichao Zhang, Xiaoxi Liu, and Mohamed El Hafidi

Phys. Rev. Applied 16, 014040 – Published 15 July 2021

Abstract

Technologies based on magnetic skyrmions, such as computational devices that can operate at high speed or with low energy consumption, have been proposed by many researchers. Recently, synthetic antiferromagnetic (SAF) structures have been proposed to increase the stability and mobility of skyrmions by reducing or eliminating the skyrmion Hall effect. Here, we numerically study the current-induced dynamics of skyrmions on SAF bilayer structures. We demonstrate the effective control and manipulation of SAF skyrmions, including directional displacement and alignment. Furthermore, we design SAF-skyrmion-based logic gates, such as the and, or, xor, and not gates. Our design provides guidance for future development of spintronic computing devices that use topological nanoscale spin textures as information carriers.

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Received 18 January 2021
Revised 20 May 2021
Accepted 21 June 2021

DOI:https://doi.org/10.1103/PhysRevApplied.16.014040

Physics Subject Headings (PhySH)

Hall effect Skyrmions

Antiferromagnets Devices Magnetic multilayers Nanostructures

Landau-Lifschitz-Gilbert equation Micromagnetic modeling

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Mouad Fattouhi ^1,*,†, Kai Yu Mak ^2,†, Yan Zhou ², Xichao Zhang ³, Xiaoxi Liu ³, and Mohamed El Hafidi ⁴

¹Department of Applied Physics, University of Salamanca, 37008 Salamanca, Spain
²School of Science and Engineering, the Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China
³Department of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
⁴Condensed Matter Physics Laboratory, Hassan II University of Casablanca, Faculty of Sciences Ben M’Sik, 7955 Casablanca, Morocco

^*mfa@usal.es
^†These authors contributed equally to this work.

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Vol. 16, Iss. 1 — July 2021

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