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Basic Characteristics of Photo-Resistive Photodetectors Based on Composite of Poly(3-Hexylthiophene) and Silicon Nanoparticles
Moscow University Physics Bulletin ( IF 0.4 ) Pub Date : 2021-07-10 , DOI: 10.3103/s0027134921020107
K. A. Savin 1, 2 , E. S. Ibragimov 1 , A. S. Vorontsov 1 , M. N. Martyshov 1 , P. A. Forsh 1 , I. V. Novikov 1 , E. A. Forsh 3
Affiliation  

Abstract

The spectral dependence of current sensitivity and kinetics of photoconductivity and the increase and decrease of photoresistances based on a composite of poly(3-hexylthiophene) polymer and silicon nanoparticles have been investigated. It has been found that the introduction of silicon nanoparticles makes it possible to vary both the spectral operating range and current sensitivity of photo-resistances based on the poly(3-hexylthiophene) polymer composite within a wide range. At the same time, the time characteristics of the photoresistance investigated in this work are not inferior to conventional photodetectors based on P3HT/fullerene.



中文翻译:

基于聚(3-己基噻吩)和硅纳米颗粒复合物的光阻光电探测器的基本特性

摘要

已经研究了基于聚(3-己基噻吩)聚合物和硅纳米粒子的复合材料的电流灵敏度和光电导动力学的光谱依赖性以及光阻的增加和减少。已经发现,硅纳米颗粒的引入使得基于聚(3-己基噻吩)聚合物复合材料的光阻的光谱工作范围和电流灵敏度在宽范围内变化成为可能。同时,这项工作中研究的光阻的时间特性并不逊色于基于 P3HT/富勒烯的传统光电探测器。

更新日期:2021-07-12
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