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Basic Characteristics of Photo-Resistive Photodetectors Based on Composite of Poly(3-Hexylthiophene) and Silicon Nanoparticles

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Abstract

The spectral dependence of current sensitivity and kinetics of photoconductivity and the increase and decrease of photoresistances based on a composite of poly(3-hexylthiophene) polymer and silicon nanoparticles have been investigated. It has been found that the introduction of silicon nanoparticles makes it possible to vary both the spectral operating range and current sensitivity of photo-resistances based on the poly(3-hexylthiophene) polymer composite within a wide range. At the same time, the time characteristics of the photoresistance investigated in this work are not inferior to conventional photodetectors based on P3HT/fullerene.

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Funding

This work was supported by the Russian Foundation for Basic Research under research project no. 18-29-23005.

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Authors and Affiliations

  1. Department of Physics, Moscow State University, Moscow, Russia

    K. A. Savin, E. S. Ibragimov, A. S. Vorontsov, M. N. Martyshov, P. A. Forsh & I. V. Novikov

  2. Lebedev Physical Institute, Russian Academy of Sciences, Moscow, Russia

    K. A. Savin

  3. Moscow Automobile and Road Construction State Technical University, Moscow, Russia

    E. A. Forsh

Authors
  1. K. A. Savin
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  2. E. S. Ibragimov
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  3. A. S. Vorontsov
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  4. M. N. Martyshov
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  5. E. A. Forsh
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  6. P. A. Forsh
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  7. I. V. Novikov
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Corresponding authors

Correspondence to K. A. Savin or E. S. Ibragimov.

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Savin, K.A., Ibragimov, E.S., Vorontsov, A.S. et al. Basic Characteristics of Photo-Resistive Photodetectors Based on Composite of Poly(3-Hexylthiophene) and Silicon Nanoparticles. Moscow Univ. Phys. 76, 80–83 (2021). https://doi.org/10.3103/S0027134921020107

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  • DOI: https://doi.org/10.3103/S0027134921020107

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