Purpose

The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate.

Design/methodology/approach

In this work, the effect of the nucleation thickness at 5 nm, 10 nm and 20 nm on reducing the dislocation density in the overgrown AlN layer by metal organic chemical vapor deposition was discussed. The AlN layer without the nucleation layer was also included in this study for comparison.

Findings

By inserting the 10 nm thick nucleation layer, the density of the dislocation in the AlN layer can be as low as 9.0 × 10⁸ cm⁻². The surface of the AlN layer with that nucleation layer was smoother than its counterparts.

Originality/value

This manuscript discussed the influence of nucleation thickness and its possible mechanism in reducing dislocations density in the AlN layer on sapphire. The authors believe that the finding will be of interest to the readers of this journal, in particular those who are working on the area of AlN.

中文翻译：

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成核层厚度对降低AlGaN基UVC LED的AlN层位错密度的影响

目的

本研究的目的是研究 AlN 形核厚度对降低在蓝宝石衬底上生长的 AlN 层中的穿透位错密度的影响。

设计/方法/方法

在这项工作中，讨论了 5 nm、10 nm 和 20 nm 的成核厚度对通过金属有机化学气相沉积降低过度生长的 AlN 层中位错密度的影响。没有成核层的 AlN 层也包括在本研究中以进行比较。

发现

通过插入10nm厚的成核层，AlN层中的位错密度可以低至9.0×10 ⁸  cm ^-2。具有该成核层的 AlN 层的表面比其对应物更光滑。

原创性/价值

本手稿讨论了成核厚度的影响及其降低蓝宝石上 AlN 层中位错密度的可能机制。作者相信这一发现将会引起本期刊读者的兴趣，尤其是那些在 AlN 领域工作的人。