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Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED

Muhammad Esmed Alif Samsudin (Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Penang, Malaysia)
Yusnizam Yusuf (Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Penang, Malaysia)
Norzaini Zainal (Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Penang, Malaysia)
Ahmad Shuhaimi Abu Bakar (Department of Physics, Faculty of Science, University of Malaya, Low Dimensional Materials Research Centre (LDMRC), Kuala Lumpur, Wilayah Persekutuan, Malaysia)
Christian Zollner (Materials Department, University of California Santa Barbara, Santa Barbara, California, USA)
Michael Iza (Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California, USA)
Steven P. DenBaars (Materials Department, University of California Santa Barbara, Santa Barbara, California, USA and Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California, USA)

Microelectronics International

ISSN: 1356-5362

Article publication date: 8 July 2021

Issue publication date: 2 September 2021

202

Abstract

Purpose

The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate.

Design/methodology/approach

In this work, the effect of the nucleation thickness at 5 nm, 10 nm and 20 nm on reducing the dislocation density in the overgrown AlN layer by metal organic chemical vapor deposition was discussed. The AlN layer without the nucleation layer was also included in this study for comparison.

Findings

By inserting the 10 nm thick nucleation layer, the density of the dislocation in the AlN layer can be as low as 9.0 × 108 cm−2. The surface of the AlN layer with that nucleation layer was smoother than its counterparts.

Originality/value

This manuscript discussed the influence of nucleation thickness and its possible mechanism in reducing dislocations density in the AlN layer on sapphire. The authors believe that the finding will be of interest to the readers of this journal, in particular those who are working on the area of AlN.

Keywords

Acknowledgements

The authors would like to thank Collaborative Research in Engineering, Science and Technology Center (CREST) for their continuous support in this research and AkzoNobel for partially sponsoring the metal organic sources.

This research has been funded by Kementerian Pendidikan Malaysia (203/CINOR/6711718) Fundamental Research Grant Scheme (FRGS).

Citation

Samsudin, M.E.A., Yusuf, Y., Zainal, N., Abu Bakar, A.S., Zollner, C., Iza, M. and DenBaars, S.P. (2021), "Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED", Microelectronics International, Vol. 38 No. 3, pp. 113-118. https://doi.org/10.1108/MI-02-2021-0012

Publisher

:

Emerald Publishing Limited

Copyright © 2021, Emerald Publishing Limited

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