HfC-HfB₂-SiC composites were prepared by arc melting using HfC, HfB₂ and SiC powder as raw materials. The ternary eutectic composition of 16HfC-17HfB₂-67SiC (mol%) was first identified, showing a complicated maze microstructure of HfC, HfB₂ and SiC approximately 500 nm in thickness. The eutectic temperature of the HfC-HfB₂-SiC composite was nearly 2760 K. The Vickers hardness and fracture toughness of the HfC-HfB₂-SiC ternary eutectic composite were 20.8 GPa and 7.7 MPa m^1/2, respectively. With increasing temperature from 300 to 800 K, the electrical conductivity decreased from 8.8 × 10⁵ to 4.3 × 10⁵ Sm⁻¹, whereas the thermal conductivity increased from 28 to 32 W m⁻¹ K⁻¹.

以HfC、HfB ₂和SiC粉为原料，通过电弧熔炼制备了HfC-HfB ₂ -SiC复合材料。16HfC-17HfB ₂ -67SiC (mol%)的三元共晶成分首先被确定，显示出厚度约为 500 nm的 HfC、HfB ₂和 SiC的复杂迷宫微观结构。HfC-HfB ₂ -SiC 复合材料的共晶温度接近 2760 K。HfC-HfB ₂ -SiC 三元共晶复合材料的维氏硬度和断裂韧性分别为 20.8 GPa 和 7.7 MPa m ^1/2。随着温度从 300 升高到 800 K，电导率从 8.8 × 10 ⁵下降到 4.3 × 10 ⁵ Sm^-1，而热导率从 28 W m ^-1 K ^-1增加到 32 W m ^-1 K ^-1。