Mechanical, electrical and thermal properties of HfC-HfB2-SiC ternary eutectic composites prepared by arc melting

https://doi.org/10.1016/j.jeurceramsoc.2021.07.003Get rights and content

Highlights

  • The ternary eutectic composition of 16HfC-17HfB2-67SiC (mol%) and the eutectic temperature of 2760 K was first identified.

  • The HfC-HfB2-SiC ternary eutectic composite had higher microhardness and fracture toughness than the composites prepared by sintering.

  • The HfC-HfB2-SiC ternary eutectic composite showed excellent electrical and thermal conductivity, which is beneficial for its application.

Abstract

HfC-HfB2-SiC composites were prepared by arc melting using HfC, HfB2 and SiC powder as raw materials. The ternary eutectic composition of 16HfC-17HfB2-67SiC (mol%) was first identified, showing a complicated maze microstructure of HfC, HfB2 and SiC approximately 500 nm in thickness. The eutectic temperature of the HfC-HfB2-SiC composite was nearly 2760 K. The Vickers hardness and fracture toughness of the HfC-HfB2-SiC ternary eutectic composite were 20.8 GPa and 7.7 MPa m1/2, respectively. With increasing temperature from 300 to 800 K, the electrical conductivity decreased from 8.8 × 105 to 4.3 × 105 Sm−1, whereas the thermal conductivity increased from 28 to 32 W m−1 K−1.

Introduction

Hafnium diboride (HfB2) and hafnium carbide (HfC), ultra-high temperature ceramics (UHTCs), have many excellent properties, e.g., high thermal conductivity and hardness and good chemical and thermal stability [[1], [2], [3]]. Among the UHTCs, IVB transition metal di-borides and carbides have been extensively studied due to their outstanding properties, and their basic properties are summarized in Table 1 [[4], [5], [6], [7], [8], [9], [10], [11], [12]]. However, all of them are difficult to sinter due to their ultra-high melting points and low diffusion coefficients [13]. Silicon carbide (SiC) is considered an effective sintering aid to improve the mechanical properties of HfC- and HfB2-based composites [14]. HfC-HfB2-SiC ternary composites are expected to possess the excellent combination of properties of each component. Binary composites of HfC, HfB2 and SiC have been commonly prepared by pressureless sintering [15], hot pressing [16] (HP), reactive HP [17] and spark plasma sintering [18] (SPS), but a high temperature (over 2000 °C) and long sintering time (over 1 h) are indispensable. Yuan et al. [19] prepared HfC-HfB2-SiC composites by hot pressing (HP). Licheri et al. [20] prepared HfB2-SiC and HfC-HfB2-SiC dense composites by self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) with a lower dwell temperature (1800 °C) and shorter time (10 min); however, the composites showed a low Vickers hardness of 18.3 GPa. Shahriari et al. [21] used HfO2, Mg, H3BO3, C, and Si as raw materials to prepare HfC-HfB2-SiC composites and found better mechanical properties for the composite with 15 vol% HfC. Furthermore, few reports on HfC-HfB2-SiC composites are concerned with thermal and electrical conductivity, which may extend their potential applications.

Our research group has investigated many carbide-boride eutectic composites, such as TiB2-TiC [22], ZrB2-ZrC [23], TiC-TiB2-SiC [24], and ZrC-ZrB2-SiC [25]. There are limited investigations related to the synthesis, characterization and oxidation behavior of the HfC-HfB2-SiC system. Some studies have shown that directionally solidified eutectic composites might improve the mechanical, thermal, and chemical stability compared to their monolithic or traditional composite counterparts [[26], [27], [28]]. Arc melting is a convenient approach for preliminary studies on new eutectic systems because it can provide temperatures exceeding 3000 °C, and an inert atmosphere is particularly suitable for nonoxide directionally solidified eutectics [29]. Because Ti, Zr and Hf belong to the same family in the elemental periodic table, their carbides and borides may have analogous improved behavior. In this study, HfC-HfB2-SiC ternary composites were prepared by arc melting. This study is an extension of a previous investigation on a MeC-MeB2-SiC (Me: Ti, Zr, Hf) system [[22], [23], [24], [25]] and focuses on the HfC-HfB2-SiC system, exploring the consolidation of eutectic composites with a eutectic composition. The effect of the composition on their microstructure and mechanical, electrical and thermal properties was investigated.

Section snippets

Experimental procedure

HfC (1–10 μm in size, 98.0 % in purity; Alfa Aesar, Shanghai, China), HfB2 (48–75 μm in size, 99.0 % in purity; Aladdin, Shanghai, China) and β-SiC (0.5 μm in size, 99 % in purity; Ibiden Co., Ltd., Japan) powders were weighed and mixed in a high-energy planetary ball mill (PM100, Retsch, Germany) at a speed of 300 rpm for 45 min under an atmosphere of argon. The molar and vol ratios of the HfC-HfB2-SiC composites prepared by arc melting are shown in Table 2. A WC-10 wt% Co jar was employed as

Composition and microstructure of HfC-HfB2-SiC composites

Fig. 1 shows the XRD pattern of HfC-HfB2-SiC composites on the cross-section perpendicular to the growth direction for composition targeting (a) HHS16, (b) HHS7 and (c) HHS10. Only the initial phases of HfC, HfB2 and SiC were identified, indicating no chemical reaction among them.

Fig. 2 presents the typical backscattered electron microstructure of the HfC-HfB2-SiC composites on the cross-section perpendicular to the growth direction, where the black phase is SiC, the white phase is HfC, and the

Conclusions

Seventeen mixtures in the HfC-HfB2-SiC ternary system were prepared by arc melting to define the eutectic composition. Possible compositions were selected according to any melted specimen that contained a part of the eutectic texture, similar to previous studies on the ZrC-ZrB2-SiC ternary system. Upon inducing melting by a spark plasma sintering apparatus, it was defined that the eutectic composition is 16HfC-17HfB2-67SiC (mol%) with a eutectic temperature of 2760 K, displaying the typical

Summary of novel conclusions

The ternary eutectic composition of 16HfC-17HfB2-67SiC (mol%) and the eutectic temperature of 2760 K was first identified, showing a complicated maze microstructure of HfC, HfB2 and SiC about 500 nm in thickness. For the HfC-HfB2-SiC eutectic composite, its electrical conductivity decreased from 8.8×105 to 4.3×105 Sm−1 at room temperature to 800 K and the thermal conductivity increased from 30 to 35 WK−1m−1 at room temperature to 873 K.

Declaration of Competing Interest

The authors report no declarations of interest.

Acknowledgements

This work was supported by the Joint Fund of the Ministry of Edu-cation for Pre-research of Equipment (6141A02022257), the Science Challenge Project (No. TZ2016001), the National Natural Science Foundation of China (Nos. 51861145306, 51872212 and 51972244), and the 111 Project (B13035, B17034). It was also supported by: the International Science & Technology Cooperation Program of China (2018YFE0103600, 2014DFA53090), the Technological Innovation of Hubei Province, China (2019AAA030) and by the

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