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Thin Zn1 – xMnxO Films (x = 1–4 at %) by Chemical Bath Deposition: Influence of Dopant Concentration
International Journal of Self-Propagating High-Temperature Synthesis ( IF 0.5 ) Pub Date : 2021-06-30 , DOI: 10.3103/s1061386221020096
G. R. Patil , M. B. Shelar , N. J. Kambale , L. D. Kadam , V. S. Raut , B. N. Pawar

Abstract

Thin films of Zn1–xMnxO (x = 1–4 at %) were applied onto a glass substrate by low-cost chemical bath deposition (CBD). The films were characterized by XRD, UV–VIS absorption spectra, SEM, and vibrating sample magnetometry—with special emphasis on the influence of dopant concentration x. Structural and optical properties of deposited films imply that the Mn2+ ions substituted Zn2+ ions without changing the wurtzite structure of ZnO. No impurity phases were detected in XRD patterns. The band gap in ZnO was found to increase with increasing x. Magnetic measurements showed that Mn-doped ZnO samples exhibited ferromagnetic behavior at room temperature, which tentatively was associated with the replacement of Zn2+ ions by Mn2+ ions in the ZnO lattice.



中文翻译:

Zn1 – xMnxO 薄膜(x = 1–4 at %)通过化学浴沉积:掺杂浓度的影响

摘要

通过低成本化学浴沉积 (CBD)将 Zn 1– x Mn x O ( x = 1–4 at %) 薄膜施加到玻璃基板上。通过 XRD、UV-VIS 吸收光谱、SEM 和振动样品磁力测定法对薄膜进行表征——特别强调掺杂剂浓度x的影响。沉积膜的结构和光学特性意味着 Mn 2+离子取代了 Zn 2+离子而不会改变 ZnO 的纤锌矿结构。在 XRD 图中没有检测到杂质相。发现 ZnO 的带隙随着x 的增加而增加. 磁性测量表明,掺杂 Mn 的 ZnO 样品在室温下表现出铁磁行为,这暂时与ZnO 晶格中的Mn 2+离子替代 Zn 2+离子有关。

更新日期:2021-06-30
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