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Influence of (0, 1)* Laguerre-Gaussian Field Distribution on Tunneling Ionization Rate
Journal of Experimental and Theoretical Physics ( IF 1.1 ) Pub Date : 2021-06-28 , DOI: 10.1134/s1063776121050046
T. B. Miladinović , S. Simić , N. Danilović , M. Z. Jeremić

Abstract

In the frame of the ADK theory, the tunneling ionization of an argon atom exposed to the light from Ti:Sapphire laser is investigated. We assume that the laser field is the radially polarized beam with donut. (0, 1)* Laguerre-Gaussian field distribution. Considering that LG (0, 1)* modes can appear with random or uniform polarization (linear, circular or elliptical), we analyzed behavior of transition rate in all three types. We computed transition rate in basic case and in the case when the initial momentum of the ejected electron is included in the equation. Also, we analyzed influence of the modified initial ionization potential of ionized electron on transition rate. In the basic case, we got what we expected but with included effect we find appearance of two transition rate peaks at a certain point of the electron’s exit from the barrier.



中文翻译:

(0, 1)* Laguerre-Gaussian 场分布对隧道电离率的影响

摘要

在 ADK 理论的框架中,研究了暴露在 Ti:Sapphire 激光器光下的氩原子的隧道电离。我们假设激光场是带有甜甜圈的径向偏振光束。(0, 1)* 拉盖尔-高斯场分布。考虑到 LG (0, 1)* 模式可以随机或均匀极化(线性、圆形或椭圆形)出现,我们分析了所有三种类型的跃迁率行为。我们计算了基本情况下的跃迁率,以及在方程中包含喷射电子的初始动量的情况下。此外,我们分析了电离电子的修正初始电离电位对跃迁速率的影响。在基本情况下,我们得到了预期的结果,但在包含效应的情况下,我们发现在电子离开势垒的某个点出现了两个跃迁率峰值。

更新日期:2021-06-28
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