We study the response of a composite beam (unimorph) with a piezomagnetic layer and a piezoelectric semiconductor layer under a transverse magnetic field. A one-dimensional model for coupled bending and extension of the beam is derived from the three-dimensional theory. A simple and analytical solution of the model is obtained, showing that various electromechanical fields develop in the beam through piezomagnetic and piezoelectric couplings as well as semiconduction. In particular, the mobile charges in the semiconductor layer redistribute themselves under the magnetic field. A coupling coefficient is defined to describe the strength of this magneto-semiconduction coupling. The effects of physical and geometric parameters on the fields and the coupling coefficient are examined. The results are fundamental to piezotronics when magnetic effects are involved.

我们研究了具有压电层和压电半导体层的复合梁（单压电晶片）在横向磁场下的响应。梁的弯曲和延伸耦合的一维模型是从三维理论推导出来的。获得了模型的简单解析解，表明通过压电和压电耦合以及半导体在梁中产生各种机电场。特别是，半导体层中的移动电荷在磁场下重新分布。定义了耦合系数来描述这种磁-半导体耦合的强度。检查物理和几何参数对场和耦合系数的影响。