Abstract—

The formation of thin single-crystal films of Li, Cs, Rb, and Ba silicides, formed during the implantation of ions in Si(111) and Si(100) with a low energy (<5 keV) and a large dose (~10¹⁷cm^–2) are studied by electron spectroscopy and slow electron diffraction. It is established that the implantation of Li, Cs, Rb, and Ba ions with an energy of 1 keV and a dose of 2 × 10¹⁷ cm^–2 with subsequent short-term heating leads to the formation of films with the following superstructures: Si(111)–2 × 2Rb, Si(111)–4 × 4Cs, and Si(111)–4 × 4Li. The effect of ion implantation and subsequent heating on the frequency of surface and bulk plasma oscillations of valence electrons in silicon is described.

中文翻译：

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在 Si 中的离子注入和随后的热退火过程中形成金属（Li、Cs、Rb 和 Ba）的硅化物膜

摘要——

在 Si(111) 和 Si(100) 中以低能量 (<5 keV) 和大剂量 (~ 10 ¹⁷ cm ^–2 ) 通过电子能谱和慢电子衍射进行研究。已经确定，以 1 keV 的能量和 2 × 10 ¹⁷ cm ^–2的剂量注入 Li、Cs、Rb 和 Ba 离子，并随后进行短期加热，导致形成具有以下超结构的薄膜： Si(111)–2 × 2Rb、Si(111)–4 × 4Cs 和 Si(111)–4 × 4Li。描述了离子注入和随后加热对硅中价电子的表面和体等离子体振荡频率的影响。