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On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

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Abstract

The formation of thin single-crystal films of Li, Cs, Rb, and Ba silicides, formed during the implantation of ions in Si(111) and Si(100) with a low energy (<5 keV) and a large dose (~1017cm–2) are studied by electron spectroscopy and slow electron diffraction. It is established that the implantation of Li, Cs, Rb, and Ba ions with an energy of 1 keV and a dose of 2 × 1017 cm–2 with subsequent short-term heating leads to the formation of films with the following superstructures: Si(111)–2 × 2Rb, Si(111)–4 × 4Cs, and Si(111)–4 × 4Li. The effect of ion implantation and subsequent heating on the frequency of surface and bulk plasma oscillations of valence electrons in silicon is described.

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Correspondence to A. S. Rysbaev or M. T. Normurodov.

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Translated by S. Rostovtseva

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Rysbaev, A.S., Normurodov, M.T., Khujaniyozov, J.B. et al. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing. J. Surf. Investig. 15, 607–610 (2021). https://doi.org/10.1134/S1027451021030319

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  • DOI: https://doi.org/10.1134/S1027451021030319

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